Article Reworded

Kioxia Corporation and Sandisk Corporation have introduced an advanced 3D flash memory technology that has set a new standard in the industry. This technology boasts a NAND interface speed of 4.8 Gb/s, exceptional power efficiency, and increased density.

Unveiled at ISSCC 2025, this new 3D flash memory innovation, along with the companies' groundbreaking CBA (CMOS directly Bonded to Array) technology, incorporates the latest interface standard, Toggle DDR6.0 for NAND flash memory. It also utilizes the SCA (Separate Command Address) protocol, a unique command address input method, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which helps reduce power consumption. With this high-speed technology, the companies anticipate a 33 percent improvement in NAND interface speed compared to their current 8th generation 3D flash memory, reaching a speed of 4.8 Gb/s. Additionally, the technology enhances power efficiency for data input/output, reducing power consumption by 10 percent for input and 34 percent for output, striking a balance between performance and power efficiency. Looking ahead to the 10th generation 3D flash memory, the companies plan to increase the number of memory layers to 332 and optimize the floor plan to improve bit density by 59 percent.

Hideshi Miyajima, Chief Technology Officer at Kioxia, stated, "With the rise of AI technologies, the volume of data generated is expected to grow significantly, increasing the demand for improved power efficiency in data centers. Kioxia believes that this new technology will enable the development of larger capacity, higher speed, and lower power consumption products, including SSDs for future storage solutions, and pave the way for AI advancement."

Alper Ilkbahar, SVP of Global Strategy and Technology at Sandisk, commented, "As AI progresses, customer requirements for memory are becoming more diverse. Through our CBA technology innovation, we aim to introduce products that offer the best combination of capacity, speed, performance, and capital efficiency to meet the needs of customers across various market segments."

Kioxia and Sandisk also outlined their plans for the upcoming 9th generation 3D flash memory. Leveraging their CBA technology, the companies can merge the new CMOS technology with existing memory cell technology to deliver cost-effective, high-performance, low-power products. Both companies are dedicated to advancing flash memory technologies, providing customized solutions to meet customer demands, and contributing to the progress of the digital society.